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Numerical analysis of the electrical characteristics of gate overlapped lightly doped drain polysilicon thin film transistors
Academic Article
Publication Date:
1999
Iris type:
01.01 Articolo in rivista
List of contributors:
Mariucci, Luigi; Pecora, Alessandro; Fortunato, Guglielmo
Authors of the University:
MARIUCCI LUIGI
PECORA ALESSANDRO
Handle:
https://iris.cnr.it/handle/20.500.14243/177207
Published in:
JAPANESE JOURNAL OF APPLIED PHYSICS
Journal
