Electronic properties at complex interfaces

In this report, the study of electronic processes and barrier heights at semiconductor-semiconductor and semiconductor-metal interfaces, of interest for applications in (nano)electronics, energy conversion and optoelectronic devices, is presented. Two different systems are chosen, namely, the SrTiO3-TiO2 interface and graphene nanoribbons covalently attached to a metallic substrate. Fundamental properties, following the formation of the interface, are: charge transfer and interface dipole, band offset, role of defects.