Publication Date:
1996
abstract:
Results on the chemisorption of molecular oxygen on Si(111)-2 × 1 at different temperatures are reported. They show that oxygen is initially physisorbed in a precursor state, from which it can be thermally activated into the chemisorbed state. An activation energy of 20 meV is found. The dependence of the sticking coefficient upon coverage deviates from the classical Langmuir theory. A model of chemisorption fitting the experimental observations is presented. In the frame of this model, the heights of the barriers for chemisorption and desorption are obtained.
Iris type:
01.01 Articolo in rivista
Keywords:
Adsorption kinetics Atom-solid reactions Chemisorption Infrared absorption spectroscopy Physical adsorption Semiconducting surfaces Silicon Single crystal surfaces Solid-gas interfaces Sticking
List of contributors:
Selci, Stefano
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