Electrical and optical properties of ITO and ITO/Cr-doped ITO films

In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spinpolarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological wand electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as similar to 4 x 10(-4) Omega cm, an energy gap of similar to 4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (similar to 0.4-0.5 nm) and resistivity (up to similar to 8x10(-4) Omega cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm.