Formation and evolution of small B clusters in Si: Ion channeling study

B off-lattice displacement in B-doped Si was observed under Si self-interstitials (Is) supersaturation induced by ion irradiation at room temperature. B lattice location has a characteristic channeling mark and was studied by nuclear reaction analyses and ion channeling technique, through the comparison of the performed angular scans along the < 100 > and < 110 > crystal axes and the simulated scans by FLUX code. Solid and liquid-phase epitaxies and molecular beam epitaxy were used to prepare B-doped Si samples in order to investigate samples with B concentration in the range between 10(19) and 10(21) at/cm(3). B off-lattice displacement is limited by the fluence of excess Is per B atom. Small B-Is clusters (BICs) were formed as consequence of the interaction with Is produced during the ion irradiation. Clusters structures were investigated by simulating the channeling angular scans of cluster configurations predicted by theoretical calculations. In the early stage of Is injection, experimental observations are consistent with the presence of the predicted B2I clusters. These small BICs evolved into different structures under further ion irradiation.