Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure

This paper reports on the room temperature ambipolar diffusion of oxygen vacancies and electrons in epitaxial films of pure CeO2 and 20% Sm-doped CeO2 a few tens of nanometers thick. To this aim, we fabricated heteroepitaxial structures consisting of an epitaxial ceria film sandwiched between a Pt upper electrode and a conducting substrate of Nb-doped SrTiO3 (lower electrode). The observed decay of the electrical conductivity was investigated. In particular, following this approach, we could measure room temperature diffusion coefficient in thin monocrystalline dielectric layers. While pure ceria is interesting for memory device applications, in doped ceria the resistive switching involves diffusion mechanisms that occur on much longer time scales. Under this respect, doped ceria is particularly suitable to be used in artificial neuronal devices.