LATERAL SPREAD OF HIGH-ENERGY P-IONS AND B-IONS IMPLANTED IN SILICON ALONG THE [100] AXIS AND IN RANDOM DIRECTION

B and P ions were implanted along the [100] axis or at 7-degrees tilt angle of silicon wafers covered by a sequence of 10 mum wide and 3 mum thick SiO2 stripes. The lateral penetration under the oxide layer, measured by two-dimensional spreading resistance technique, is higher for random than for channeled implants. With increasing the dose the lateral straggling of channeled-implants increases due to the disorder introduced in the sample. The results are correlated with calculations obtained by the MARLOWE code.