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Conductance distribution in doped and defected graphene nanoribbons

Academic Article
Publication Date:
2009
abstract:
Electronic transport at the mu m length scale is theoretically investigated for N-doped and vacancy damaged graphene nanoribbons. In these systems, localization due to scattering is strongly energy dependent, and this fact leads to the appearance of conductance quasigaps in the spectral region of the resonance states. Conductance fluctuations are very large in the quasigap regions and increase linearly with the system size. The single parameters scaling hypothesis is not verified for energies in a zone including the charge neutrality point while it is valid for energies away from this zone.
Iris type:
01.01 Articolo in rivista
Keywords:
Graphene; Vacancy type defect; Doping; Electron Transport; Green Function Formalism
List of contributors:
Deretzis, Ioannis; LA MAGNA, Antonino
Authors of the University:
DERETZIS IOANNIS
LA MAGNA ANTONINO
Handle:
https://iris.cnr.it/handle/20.500.14243/50502
Published in:
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Journal
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URL

http://prb.aps.org/abstract/PRB/v80/i19/e195413
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