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A drift-diffusion subband model for the double-gate MOSFET

Conference Paper
Publication Date:
2005
abstract:
A self consistent model for charged particles, accounting for quantum confinement, diffusive transport and electrostatic interaction is considered. In this coupled quantum classical system, the coupling occurs in the momentum variable : the electrons are like point particles in the direction parallel to the gas (classical transport) while they behave like waves in the transversal direction (quantum description). Numerical implementation of this model provides a simulation of the transport of charge carriers in a quasi bidimensional electron gas confined in a nanostructure.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Drift diffusion system; Nanotransistor; Schrödinger equation; Subband model; finite elements
List of contributors:
Pietra, PAOLA LUISA MARIA
Handle:
https://iris.cnr.it/handle/20.500.14243/59235
Book title:
2005 5th IEEE Conference on Nanotechnology Volume 2
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