Ni-Al-Ti ohmic contacts on 1 x 10(20) cm(-3) Al+ ion implanted 4H-SiC

Ni/Al/Ti ohmic contacts with preserved form factor during alloying at 1000 degrees C, almost constant specific resistance value in the low 10(-4) Omega cm(2) decade, and a very weak temperature dependence in the range 25 - 290 degrees C, have been obtained on 1 x 10(20) cm(-3) Al+ implanted p-type 4H-SiC of different resistivity in the range 6 x 10(-2) - 1 Omega cm. A qualitative data analysis for understanding the hole transport mechanism through the formed metal/semiconductor interface is also shown.