Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing

The carbon vacancy (V-C) is perhaps the most prominent point defect in silicon carbide (SiC) and it is an efficient charge carrier lifetime killer in high-purity epitaxial layers of 4H-SiC. The V-C concentration needs to be controlled and minimized for optimum materials and device performance, and an approach based on post-growth thermal processing under C-rich ambient conditions is presented. It utilizes thermodynamic equilibration and after heat treatment at 1500 degrees C for 1 h, the V-C concentration is shown to be reduced by a factor similar to 25 relative to that in as-grown state-of-the-art epi-layers. Concurrently, a considerable enhancement of the carrier lifetime occurs throughout the whole of >40 mu m thick epi-layers.