Publication Date:
2007
abstract:
The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
InGaP/GaAs; HRXRD; TEM; MOVPE
List of contributors:
Germini, Fabrizio; Attolini, Giovanni; Frigeri, Cesare; Bosi, Matteo; Pelosi, Claudio
Book title:
AIP CONFERENCE PROCEEDINGS