Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen
Academic Article
Publication Date:
2002
abstract:
Pronounced oxygen segregation in helium-implanted Czochralski silicon,
Cz-Si:He, treated at 10001400K under atmospheric or enhanced, up to
1.2E9Pa, hydrostatic pressure, HP, is observed. Annealing of
hydrogen-implanted Cz-Si:H at 720920 K - 1E5Pa also results in the oxygen
accumulation in the damaged volume while no accumulation is detected at
1GPa and at 1230K. The HP effect on transformation of post-implantation
defects and on oxygen diffusivity can be responsible for oxygen
accumulation in Cz-Si:(He, H).
Iris type:
01.01 Articolo in rivista