3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP)

3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better compliance between Si and 3C-SiC. We present here an approach to favorite defect geometrical reduction in both [ 1?10 ] and [ 1?1?0 ] directions by creating Inverted Silicon Pyramids (ISP). A study of 3C-SiC growth on ISP is reported showing benefits in the film quality and a reduction in the linear density of stacking faults. Growth on ISP leads also to a decrease in the 3C-SiC residual stress as well as in the bow of the Si/SiC system. © (2010) Trans Tech Publications.