MOCVD of CeF3 films on Si (100) substrates: synthesis, characterization and luminescence spectroscopy

CeF3 thin films have been deposited on Si(100) substrates by metal-organic chemical vapor deposition (MOCVD). The Ce(hfa)3diglyme [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme = (CH3O(CH2CH2O)2CH3)] precursor has been adopted as a single source for both Ce and F components. This adduct has proved to be a good and reliable precursor, suitable for evaporation from the liquid phase due to its rather low melting point (75 °C). The structural, compositional, morphological and spectroscopic properties of the films have been investigated by X-ray diffraction (XRD), wavelength dispersion X-ray analysis (WDX), scanning electron microscopy (SEM) and luminescence spectroscopy.