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Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si

Academic Article
Publication Date:
2009
abstract:
The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.
Iris type:
01.01 Articolo in rivista
Keywords:
XAFS; ion implantation; shallow junctions
List of contributors:
Boscherini, Federico; Carnera, Alberto; DE SALVADOR, Davide; Priolo, Francesco; Napolitani, Enrico; Mirabella, Salvatore
Authors of the University:
BOSCHERINI FEDERICO
Handle:
https://iris.cnr.it/handle/20.500.14243/1044
Published in:
APPLIED PHYSICS LETTERS
Journal
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