Publication Date:
2009
abstract:
The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial
regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly
demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway,
which explains our observation and which is also able to rationalize previous results in a common
and coherent framework, is proposed.
Iris type:
01.01 Articolo in rivista
Keywords:
XAFS; ion implantation; shallow junctions
List of contributors:
Boscherini, Federico; Carnera, Alberto; DE SALVADOR, Davide; Priolo, Francesco; Napolitani, Enrico; Mirabella, Salvatore
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