Interstitial diffusion influence upon two-dimensional boron profiles

The effect of interstitials on two-dimensional boron diffusion has been deduced by two-dimensional profiling on samples implanted with I keV B ions. Carrier profiles were measured by scanning capacitance microscopy enhancing depth and lateral resolution by a double bevelling sample preparation, Implants were performed at two different doses (1 X 10(14) cm(-2) and 1 x 10(15) cm(-2)) into patterned wafers with several stripe widths ranging from 0.5 to 5 mum. B transient enhanced diffusion is strongly reduced with decreasing feature size, depending also on implanted dose. The effect is inhibited if a uniform concentration of displaced silicon atoms is obtained by self-Si ion implantation after mask removing.