Thermal modeling of GaInAs/AlInAs quantum cascade lasers

We measured the facet temperature profiles of GaInAs/AlInAs quantum cascade lasers (QCLs) operating in continuous wave mode by means of microprobe photoluminescence. These results were used to evaluate the in-plane (k(parallel to)) and the cross-plane (k(perpendicular to)) thermal conductivities of the active region and to validate a two-dimensional model for the anisotropic heat diffusion in QCLs. In the temperature range of 80-250 K, k(perpendicular to) monotonically increases with temperature and remains one order of magnitude smaller than the thermal conductivities of bulk constituent materials. We found an excellent agreement between the calculated and experimental values of the thermal resistance of GaInAs/AlInAs QCLs operating in continuous wave up to 400 K. Comparison between the calculated thermal performances of QCLs sharing the same active region structure, but having either a buried or a ridge waveguide, shows that devices with Au contact layers thicker than 4 mu m have better thermal properties than the buried structures. (c) 2006 American Institute of Physics.