In depth analysis of channel length, fin width (down to 10 nm) impacts on Fowler-Nordheim program/erase characteristics of Si-NC SOI FinFlash memories

Conference Paper
Publication Date:
2007
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/69281