Data di Pubblicazione:
2010
Abstract:
A new vertical-cavity surface-emitting laser structure employing
a thin microlens is suggested and numerically investigated. The laser can be
made to emit in either a high-power Gaussian-shaped single-fundamental
mode or a high-power doughnut-shaped higher-order mode. The physical
origin of the mode selection properties of the new structure is rigorously
analyzed and compared to other structures reported in the literature. The
possibility of engineering the emission shape while retaining strong single
mode operation is highly desirable for low-cost mid-range optical
interconnects applications as well as the compact optical trapping of highrefractive-
index dielectric particles and low-refractive-index, absorbing, or
metallic particles.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
VCSEL; laser a semiconduttore
Elenco autori:
Debernardi, Pierluigi
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