DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

Highly strained InAs/InP heterostructures and InxGa1-xAs/InAs single quantum wells on InP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The depth resolution of the SAXPS profiling was found to be limited mainly by the photoelectron information depth. It was demonstrated that the ternary compound InAsxPx is formed on the InP substrate during its deoxidation under an arsenic flux. The thickness of the InAsxP1-x interfacial sublayer was determined and the segregation of indium on the sample and substrate surfaces was revealed from the SAXPS profiles.