Tracking the excitation dynamics in the Mn:Ge(111) metallic interface by resonant electron spectroscopy

Resonant photoemission from the valence band of a (?3 × ?3)R30° reconstructed Mn:Ge(111) metallic interface has been carefully analyzed with the aim to track the transition from resonant Raman to normal Auger emission. The transition energy has been compared with the Mn 2p binding energy, as well as with the Mn L 3 absorption edge energy. Close similarities emerge with respect to the case of elemental Mn thin films, suggesting that the excitation dynamics is dominated by the electronic properties of Mn 3d states, in spite of the bonding with Ge atoms. The switching from the resonant Raman Auger (RRAS) to the normal Auger regime is found about 2 eV below the Mn L 3 absorption edge. A change of the lineshape due to the transition from an overall N - 1 electron final state (RRAS channel) to an N - 2 electron final state (normal Auger channel) is evidenced by the analysis of the experimental data, which also allowed the ratio to be tracked between charge delocalization and core-hole time scales as the photon energy is tuned across the Mn L 3 edge.