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Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

Chapter
Publication Date:
2018
abstract:
The first part of this chapter describes the main processes that influence the optical and electrical behavior of the devices below and above the optical turn-on, along with their theoretical framework and a brief review of the literature on the topic. In the second part, we present a comprehensive analysis of diffusion-related degradation processes, based on previous literature reports. Finally, we present a discussion on the possible physical models able to explain experimental data on degradation of GaN-based optoelectronic devices.
Iris type:
02.01 Contributo in volume (Capitolo o Saggio)
Keywords:
LED; GaN; nitrides
List of contributors:
Goano, Michele; Bertazzi, Francesco; Tibaldi, Alberto
Handle:
https://iris.cnr.it/handle/20.500.14243/331401
Book title:
Nitride Semiconductor Light-Emitting Diodes (LEDs)
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