Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof

Patent
Publication Date:
2020
Iris type:
06.01 Brevetto di invenzione industriale
Keywords:
gallium nitride; normally-off HEMT
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/422722