Low density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength

In this work we report on the morphological and optical properties of low-density self-assembled InGaAs quantum dots (QDs), suitable for quantum communication applications. The QDs are grown directly into a GaAs matrix by Stranski-Krastanov metal organic chemical vapour deposition, and emit at 1300 nm at room-temperature. We have studied the influence of the deposition rate on the morphological properties of the dots in order to obtain reproducible low-density samples. After the optimization of the growth conditions, we have fabricated, processed and preliminarily characterized a QD light-emitting diode, operating at 1300 nm, based on QDs with a density as low as 10⁹ cm^-2.