K-band Diamond MESFETs for RFIC technology

Conference Paper
Publication Date:
2009
abstract:
Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P(out)=1.5 W/mm) and high frequency (and f(MAX)=35 GHz) performances have been obtained.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Diamond; wide band gap semiconductors; RF performances; RFICs; microwave operation
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/217427
Book title:
RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM