X-ray section topographic investigation of the growth process of SiC crystals

We study the growth process of SiC crystals by synchrotron radiation section topography. In general, we observe the enlargement of the main crystal which grows above the seed at the expense of the small crystallites which surround it. At an initial moment of the growth we also observe the crystallites with a common axis to increase in size at the expense of the randomly oriented crystallites, these later finally disappearing, The bigger crystallites with an orientation similar to the main crystal are connected to the main crystal by a continuously deformed region.