Data di Pubblicazione:
2018
Abstract:
On our way to develop a multiphysical model of VCSELs including carrier transport, electromagnetic propagation, and heat conduction, we discuss some critical aspects of the adopted multiscale strategy. In particular, we address the inclusion of non-classical corrections within a classical carrier transport framework, and the possibilities offered by rigorous approaches such as the nonequilibrium Green's function (NEGF) towards the determination of some critical parameters, bridging from the nanometer to the macroscopic scale. This seems a promising line of action towards the simulation and optmization of 3D highly nanostructured devices such as VCSELs.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
VCSELs; carrier transport; optoelectronic device simulation; NEGF
Elenco autori:
Goano, Michele; Bertazzi, Francesco; Tibaldi, Alberto; Debernardi, Pierluigi
Link alla scheda completa:
Titolo del libro:
18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018)