THE STABILITY OF ZINC-OXIDE ELECTRODES FABRICATED BY DUAL ION-BEAM SPUTTERING

The stability of the electrical and optical properties of dual ion beam sputtered zinc oxide films, with resistivities of 10(-3) OMEGA cm, were investigated. ZnO films were deposited at room temperature by argon ion beam sputtering of a zinc oxide target. Argon or hydrogen/argon mixtures of positive ions were irradiated by the second source on the growing film. After heat treatment in air, no significant changes in the electrical and optical properties are observed for films irradiated by hydrogen/argon ions. ZnO films prepared by this method would be useful in the production of transparent and conductive electrodes for practical use at high temperature.