MOCVD growth and structural characterization of In-Sb-Te nanowires

In this work, the self-assembly of In3Sb1Te2 and In-doped Sb4Te1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In3Sb1Te2 and In-doped Sb4Te1 NWs were obtained for different reactor pressures at 325