Fabrication of LaAlO3/Pt(100)/Hastelloy C276 and CeO2(100)/Pt(100)/Hastelloy C276 multilayers by metallorganic chemical vapor deposition

Multilayer structures LaAlO3/Pt(100) and CeO2(100)/Pt(100) have been grown on Hastelloy C276 by metallorganic chemical vapor deposition. The volatile ?-diketonate Pt(acac)2 precursor has been used to grow Pt films at 280°C. They are <100> oriented with very smooth and homogeneous surfaces. The second-generation lanthanum and cerium precursors (M(hfa)3odiglyme) [M = La(III), Ce(III)] have been successfully used for growing LaAlO3 and CeO2 layers on Pt(100). A two-step roule has been used for LaAlO3 since there is evidence of severe interdiffusion adopting a one-step, higher temperature approach. <100> oriented CeO2 films can be easily deposited on Pt(100) at 450°C.