Publication Date:
1997
abstract:
Excitonic properties of high-quality ZnS layers grown by low-pressure metal-organic vapor-phase epitaxy have been investigated using photoluminescence and absorption spectroscopy. Comparison with theoretical models has provided accurate information on eigenstates, broadening, strain, and temperature dependence of heavy-hole, light-hole, and split-off-band exciton transitions. Finally, radiative recombination due to inelastic exciton-polariton scattering is shown under strong injection rates.
Iris type:
01.01 Articolo in rivista
Keywords:
STRAINED-LAYER SUPERLATTICES; VAPOR-PHASE EPITAXY; QUANTUM-WELLS; CUBIC ZNS; PHOTOLUMINESCENCE; SEMICONDUCTORS; REFLECTIVITY; SPECTROSCOPY; ABSORPTION
List of contributors:
Prete, Paola
Published in: