Transport properties of photogenerated charge carriers in black diamond films

Surface nanostructured diamond films by ultrashort pulse laser treatment, named black diamond, demonstrated a huge increase in the photogeneration capability for photons with sub-bandgap energy (<5.47 eV). Here we analyze in detail the transport properties of photogenerated charge carriers in several black diamond samples, in order to better understand the electronic behavior of defect levels introduced by the laser treatment. If compared with the pristine diamond films, the mean charge carriers' mobility-lifetime product, evaluated from the over bandgap photocurrent characteristics, remarkably increases in every black diamond set up to a defined absorbed accumulated laser fluence before decreasing at the highest fluence values. We attribute this effect to the laser-induced introduction of fast traps for one charge carrier type, that increases with fluence. At the same time, an increasing density of recombination centers, capturing permanently the charge carriers, is formed. A trade-off treatment condition can be found in order to maximize the sensitivity to sub-bandgap photons and the mean mobility-lifetime product as well as to limit the effect of recombination centers.