Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 mu m: Fabrication and characterization

In this paper, the realization and the characterization of a resonant cavity enhanced RCE photodetector, completely silicon compatible and working at 1.55 m, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu/ Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 m is experimentally demonstrated.