Skip to Main Content (Press Enter)
×
Home
People
Outputs
Organizations
Expertise & Skills
IT
EN
☰
UNI-FIND
|
UNI-FIND
cnr.it
IT
EN
×
Home
People
Outputs
Organizations
Expertise & Skills
☰
Outputs
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide
Conference Poster
Publication Date:
2009
Iris type:
04.03 Poster in Atti di convegno
Keywords:
Silicon Carbide
List of contributors:
Attolini, Giovanni; Rossi, Francesca; Bosi, Matteo; Salviati, Giancarlo; Watts, BERNARD ENRICO
Authors of the University:
BOSI MATTEO
ROSSI FRANCESCA
Handle:
https://iris.cnr.it/handle/20.500.14243/99279
