Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

Contributo in Atti di convegno
Data di Pubblicazione:
2001
Abstract:
The cathodoluminescence (CL) depth profiling of the optical emissions from (0001) GaN/GaNbuffer/Al2O3 heterostructures has been performed at 77
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
YELLOW LUMINESCENCE; VACANCIES; DEVICES; STATES
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/9014
Titolo del libro:
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001
Pubblicato in:
INSTITUTE OF PHYSICS CONFERENCE SERIES
Series