Inherent electronic trap states in TiO2 nanocrystals: effect of saturation and sintering
Academic Article
Publication Date:
2013
abstract:
We report a quantum mechanical investigation on the nature of electronic trap states in realistic models of
individual and sintered anatase TiO2
nanocrystals (NCs) of ca. 3 nm diameter. We find unoccupied
electronic states of lowest energy to be localized within the central part of the NCs, and to originate
from under-coordinated surface Ti atoms lying mainly at the edges between the (100) and (101) facets.
These localized states are found at about 0.3-0.4 eV below the fully delocalized conduction band states,
in good agreement with both electrochemical and spectro-electrochemical results. The overall DensityOf-States (DOS) below the conduction band (CB) can be accurately fitted to an exponential distribution
of states, in agreement with capacitance data. Water molecules adsorbed on the NC surface raise the
energy and reduce the number of localized states, thus modifying the DOS. As a possible origin of
additional trap states, we further investigated the oriented attachment of two TiO2
NCs at various
possible interfaces. For the considered models, we found only minor differences between the DOS of
two interacting NCs and those of the individual constituent NCs. Our results point at the presence of
inherent trap states even in perfectly stoichiometric and crystalline TiO2
NCs due to the unavoidable
presence of under-coordinated surface Ti(IV) ions at the (100) facets
Iris type:
01.01 Articolo in rivista
List of contributors:
Nunzi, Francesca; Mosconi, Edoardo; Ronca, Enrico; DE ANGELIS, Filippo
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