Electrical properties of MOCVD praseodymium oxide based MOS structures

Prascodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750degreesC on p-type Si (100) substrate have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10(-3) torr oxygen partial pressure produced Pr2O3 and a (PrnO2n-2SiO2)-Si-. bottom layer. The electrical properties of both Pr2O3/(PrnO2n-2SiO2)-Si-. structures and (PrnO2n-2SiO2)-Si-. thin layer have been investigated and compared.