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Inelastic light scattering in highly excited GaAs

Academic Article
Publication Date:
1985
abstract:
The coupled plasmon-LO-phonon and single-particle excitations of a photocreated electron-hole plasma in high purity GaAs are studied by means of Raman scattering measurements. The experimental results are described by the random-phase approximation with respect to the multicomponent character of optical plasma. From single-particle spectra the plasma distribution function and drift velocities up to 107 cm/s have been determined. Using the coupled modes as probe for the plasma density the temperature dependence of the recombination in the EHP is studied.
Iris type:
01.01 Articolo in rivista
Keywords:
Raman; plasmon-LO-phonon; electron-hole plasma; GaAs
List of contributors:
Quagliano, LUCIA GIACINTA
Handle:
https://iris.cnr.it/handle/20.500.14243/202852
Published in:
JOURNAL OF LUMINESCENCE
Journal
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