Erratum: High-frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers (Physical Review Applied (2020) 14 (014054) DOI: 10.1103/PhysRevApplied.14.014054)
Articolo
Data di Pubblicazione:
2022
Abstract:
We report on a minor correction in our article: "High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers". The sentence at page 4, starting at line 13 to the last, contains a mistake in the rescaling factor to compare single-frequency to multi-frequency measurements. The corrected sentence reads as: The total, integrated voltage set in each window is of 3.5 VRMS; to compare the result with the one given by the monochromatic, single frequency 1 GHz tone, one should consider that the signal is normalized considering the peak envelope power voltage equally spread on each excitation window. Scaling opportunely the single frequency measurement for a factor v2/n times the voltages ratio, the ~ 300 pm displacement amplitude at 1 GHz reported in Fig. 3 should then translate to roughly 7 pm at the same frequency. Note that our correction does not affect the figures, the results nor the conclusions of our manuscript.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
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Elenco autori:
Vicarelli, Leonardo; Cecchini, Marco; Pitanti, Alessandro; Zanotto, Simone
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