Low temperature rectifying junctions for crossbar non-volatile memory devices

Conference Paper
Publication Date:
2009
abstract:
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10(7) and forward current density as high as 10(4) A/cm(2) are reported. Results of the integration with NiO based switching memory elements are also shown.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
ZnO; Schottky junctions; crossbar memory devices; NiO; resistive switching materials
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/202754
Book title:
2009 IEEE INTERNATIONAL MEMORY WORKSHOP