InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy

Articolo

Data di Pubblicazione:

2011

Abstract:

Au-catalyzed InxGa1-xAs nanowires (NWs) and InxGa1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, andV/III elemental flux ratios onNWmorphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electronmicroscopy and their optical properties by low-temperature photoluminescence.

Tipologia CRIS:

01.01 Articolo in rivista

Keywords:

Electron microscopy; nanotechnology; optical spectroscopy; semiconductor growth; semiconductor heterojunctions

Elenco autori: