Effect of lateral dimensional scaling on the thermal stability of poly-CoSi2 reacted on Si (001)

The effect of lateral dimensional scaling on the thermal stability of polycrystalline cobalt disilicide wires reacted on Si (001) has been studied down to 0.6 OEºm linewidth. An unpatterned silicide has been used as a reference sample. The annealing processes were performed in N2 environment, between 900 and 1050 ¬?C, on both blanket and patterned silicide. Transmission electron microscopy analyzes in plan-view and cross-section allowed us to study the morphology of lines before and after high-temperature processes. Resistance measurements showed a better thermal stability in blanket silicide layer compared to narrow lines. The electrical behaviour of the lines has been explained in terms of both lateral roughness and hole formation in the silicide layer.