Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

A review of recently achieved results with the chloride-based CVD on 8 degrees and 4 degrees off-axis and nominally on-axis 4H-SiC wafers is done to clarify the epitaxial growth mechanisms on different off-angle substrates. The process conditions selected for each off-axis angle become even more difficult when running at growth rates of 100 mu m/h or more. A fine-tuning of process parameters, mainly temperature, C/Si ratio and in situ surface preparation is necessary for each Wangle. Some trends related to the surface properties and the effective C/Si ratio existing on the surface prior to and during the epitaxial growth can be observed.