Mn-doped GaN/AlN heterojunction for spintronic devices

We present first principles calculations of Mn-doped GaN/A1N(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of half-metallic property; this suggests the possibility to use this junction as a spin injector. (c) 2006 Elsevier Ltd. All rights reserved.