Cathodoluminescence investigation of stress induced berillium outdiffusionin AlGaAs/GaAs HBTs

In this study Cathodoluminescence spectroscopy has been used for the first time irt order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results evidence a base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism can he responsible of that. Therefore Cathodoluminescence can he used as a non, destructive technique to study Berillium outdiffusion.