Simulation of the Growth Kinetics in Group IV Compound Semiconductors

A stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp(3)-type bonding symmetry is presented. Formalization and implementation details are discussed for the particular case of the 3C-SiC material. A key feature of this numerical tool is the ability to simulate the evolution of both point-like and extended defects, whereas atom kinetics depend critically on process-related parameters. In particular, the simulations can describe the surface state of the crystal and the generation/evolution of defects as a function of the initial substrate condition and the calibration of the simulation parameters. Quantitative predictions of the microstructural evolution of the studied systems can be readily compared with the structural characterization of actual processed samples is demonstrated.