Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed on the quantum dot from the surface, allows a fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100nm InAlAs metamorphic layer with In content