Simulations of optical properties of a GaN quantum dot embedded in a AlGaN nanocolumn within a mixed FEM/atomistic method

Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband k.p is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight binding method, with the same macroscopic corrections as for k.p, implemented in TiberCAD framework itself.