Electronic and transport properties of GaN/AlGaN quantum dot-based p-i-n diodes

Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AIN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.